Amorphous Si critical dimension structures with direct Si lattice calibration<xref rid="cpb_28_3_030601_fn1" ref-type="fn">*</xref><fn id="cpb_28_3_030601_fn1"><label>*</label><p>Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).</p></fn>

Amorphous Si critical dimension structures with direct Si lattice calibration**

Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).

Wu Ziruo¹, Cai Yanni¹, Wang Xingrui¹, Zhang Longfei¹, Deng Xiao^{2, †}, Cheng Xinbin¹, Li Tongbao¹

Amorphous Si critical dimension structure fabrication based on multilayer deposition method: (a) alternative deposition of Si/SiO₂ layers on Si (111) wafer, (b) amorphous Si critical dimension structure protrudes after selective wet etching process.