Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
Han Ru †, Zhang Hai-Chao, Wang Dang-Hui, Li Cui
       

Electric field variation alone the channel surface from channel to drain for conventional TTFET, GDO-TTFET, and GDS-TTFET with Vds = 1.5 V and Vgs = −2.0 V.