Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
Han Ru †, Zhang Hai-Chao, Wang Dang-Hui, Li Cui
       

2D contour plots of the BTBT generation GBTBT for conventional TTFET (a), GDO-TTFET (b), and GDS-TTFET (c) with Vds = 1.5 V and Vgs = −2.0 V.