Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
Ids–Vgs for conventional TTFET, GDO-TTFET, and GDS-TTFET with Vds = 1.5 V.
Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Ids–Vgs for conventional TTFET, GDO-TTFET, and GDS-TTFET with Vds = 1.5 V. |
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