Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
Transconductance of the GDS-TTFET with different Hspacer at Vds = 1.0 V when Vgs is biased from 1.0 V to 2.0 V.
Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Transconductance of the GDS-TTFET with different Hspacer at Vds = 1.0 V when Vgs is biased from 1.0 V to 2.0 V. |
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