Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition
Lu Y M †, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L
       

The transient response of Ga2O3 SBPDs with various oxygen pressures at the bias of 25 V under 254 nm light illumination: (a) the drop time, and (b) the rise time.