Preparation of Ga<sub>2</sub>O<sub>3</sub> thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Lu Y M^†, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L

Spectroscopic photoresponsivity of Ga₂O₃ SBPDs measured at a bias of 25.0 V at different wavelengths ranging from 200 nm to 600 nm. The inset is a schematic diagram of the fabricated Ga₂O₃ thin film MSM structure photodetector.