Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition
Lu Y M †, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L
       

SEM images of Ga2O3 thin films: (a) 3.0 Pa, (b) 2.0 Pa, (c) 1.0 Pa, (d) 0.5 Pa, (e) 0.09 Pa.