Preparation of Ga<sub>2</sub>O<sub>3</sub> thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Lu Y M^†, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L

Raman spectra of Ga₂O₃ thin films with various oxygen pressures grown on a-plane a-Al₂O₃ ( 11 2 ¯ 0 ) substrates. The inset is the partial enlargement of the samples of 1.0 Pa, 0.5 Pa, and 0.09 Pa.