Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition
Lu Y M †, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L
The XRD (θ–2θ) patterns of the Ga2O3 films with various oxygen pressures (3.0–0.09 Pa) grown on a-Al2O3112¯0 substrates; the inset is the partial enlargement of the XRD patterns.