Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
Wang Lin-Yuan1, Song Wei-Dong1, Hu Wen-Xiao1, Li Guang1, Luo Xing-Jun1, Wang Hu1, Xiao Jia-Kai1, Guo Jia-Qi1, Wang Xing-Fu1, Hao Rui3, Yi Han-Xiang3, Wu Qi-Bao2, ‡, Li Shu-Ti1, §
       

Simulated distribution of electron (a), hole (b), and radiation recombination rate (c) for the four different UV-LEDs. (d) Normalized electron current density throughout the four structures at injection current of 180 mA.