Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
Wang Lin-Yuan1, Song Wei-Dong1, Hu Wen-Xiao1, Li Guang1, Luo Xing-Jun1, Wang Hu1, Xiao Jia-Kai1, Guo Jia-Qi1, Wang Xing-Fu1, Hao Rui3, Yi Han-Xiang3, Wu Qi-Bao2, ‡, Li Shu-Ti1, §
       

Schematic diagram of UV-LED structures with different p-AlxGa1−xN: the original structure (a) with 15 nm Al0.3Ga0.7N EBL and 85 nm Al0.2Ga0.8N, and the three modified p-type layer with respectively one section (b), two sections (c), and three sections (d) of linearly graded Al content from 30% to 10%.