Wang Ye1, 2, Gao Meng-Lei1, 2, Wu Jin-Liang1, 2, Zhang Xing-Wang1, 2, †
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(a) Schematic illustrations of solution process to fabricate 2D PbI2 nanosheets, vapor-phase conversion process to transfer PbI2 to 2D MAPbI3 perovskite nanosheets, and the crystal structure of single unit cell thick 2D MAPbI3 perovskite. (b) Atomic force microscope (AFM) topography images of 2D MAPbI3 nanosheets. (c) Schematic image of a transistor device based on 2D perovskite. (d) I–V curves of the 2D perovskite-based device under different light intensities.[145] (e) High-magnification SEM images of 2D ultrathin CsPbBr3 nanosheets. (f) AFM image and height profile of monolayer and bilayer CsPbBr3 nanosheets with a thickness of 1.6 nm and 3.3 ± 0.2 nm, respectively. (g) I–V curves of the PD in the dark and under 442 nm light (
0.35
mW
·
cm
−
2
).[143] (h) Schematic diagrams of different layer-structured perovskite materials and the perovskite-based PD. (i) Ultraviolet–visible (UV–vis) absorption spectra for layer-structured perovskite materials. (j) Wavelength-dependent photocurrent of the devices with a bias of 30 V.[154]
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