Metal halide perovskite photodetectors: Material features and device engineering

Wang Ye^{1, 2}, Gao Meng-Lei^{1, 2}, Wu Jin-Liang^{1, 2}, Zhang Xing-Wang^{1, 2, †}

(a) Schematic of MAPbI₃/IGZO hybrid phototransistors. (b) Responsivities of IGZO transistors and MAPbI₃/IGZO phototransistors at V_GS=−10 V.^[181] (c) Schematic of perovskite/PbSe hybrid PD. (d) Responsivity and detectivity of the device as a function of the wavelength ranging from 300 nm to 1500 nm at bias voltage V_DS=2 V and drain source voltage V_GS=0 V.^[46]