Review of deep ultraviolet photodetector based on gallium oxide

Qin Yuan^{1, 3}, Long Shibing^{2, 3, †}, Dong Hang^{1, 3}, He Qiming¹, Jian Guangzhong^{1, 3}, Zhang Ying^{1, 3}, Hou Xiaohu², Tan Pengju², Zhang Zhongfang², Lv Hangbing^{1, 3}, Liu Qi^{1, 3}, Liu Ming^{1, 3}

(a) Schematic representation of the fabrication processes of MSM β-Ga₂O₃ solar-blind photodetectors. (b) Temperature profile for the growth process of the seed-layer-assisted β-Ga₂O₃ thin film. (c) I–V characteristics of MSM β-Ga₂O₃ solar-blind photodetectors based on thin films deposited without and with HSL conditions in the dark. Inset shows the I–V curves of MSM β-Ga₂O₃ solar-blind photodetectors without and with HSL conditions at 250 nm and in the dark in a semilogarithmic coordinate. (d) Photoresponsivity as a function of wavelength of the MSM β-Ga₂O₃ solar-blind photodetectors grown without and with HSL conditions. (e) Time-dependent photoresponse of MSM β-Ga₂O₃ solar-blind photodetectors deposited without and with HSL, respectively.^[10]