Review of deep ultraviolet photodetector based on gallium oxide

Qin Yuan^{1, 3}, Long Shibing^{2, 3, †}, Dong Hang^{1, 3}, He Qiming¹, Jian Guangzhong^{1, 3}, Zhang Ying^{1, 3}, Hou Xiaohu², Tan Pengju², Zhang Zhongfang², Lv Hangbing^{1, 3}, Liu Qi^{1, 3}, Liu Ming^{1, 3}

(a) I–V characteristics for the MSM photodetectors on bulk Ga₂O₃ and sapphire in the dark and under light illumination of 254 nm. (b) PDCR for devices on bulk Ga₂O₃ and sapphire. Responsivity as a function of illumination optical wavelength λ for the Ga₂O₃ MSM photodetectors on (c) bulk Ga₂O₃ and (d) sapphire substrate at various V_bias, respectively. (e) Time-dependent photoresponse of the MSM photodetectors on bulk Ga₂O₃ and on sapphire under a bias voltage of 20 V. The inset lists the response and decay time of the devices.^[21]