Review of deep ultraviolet photodetector based on gallium oxide

Qin Yuan^{1, 3}, Long Shibing^{2, 3, †}, Dong Hang^{1, 3}, He Qiming¹, Jian Guangzhong^{1, 3}, Zhang Ying^{1, 3}, Hou Xiaohu², Tan Pengju², Zhang Zhongfang², Lv Hangbing^{1, 3}, Liu Qi^{1, 3}, Liu Ming^{1, 3}

(a) Schematic diagram of the fabricated Ti/Au/β-Ga₂O₃ thin film MSM structure photodetector. (b) I–V characteristics of the Ti/Au/β-Ga₂O₃ photodetector in dark, under 365 nm light and under 254 nm light illumination in a logarithmic coordinate. (c) Time-dependent photoresponse of the Ti/Au/β-Ga₂O₃ photodetector under UV light illumination at bias voltage of 10 V. (d) Experimental current rise and decay process of the photodetector under 254 nm illumination (red hollow points) and its corresponding fitting curve (black solid line).^[17]