Review of deep ultraviolet photodetector based on gallium oxide
Qin Yuan1, 3, Long Shibing2, 3, †, Dong Hang1, 3, He Qiming1, Jian Guangzhong1, 3, Zhang Ying1, 3, Hou Xiaohu2, Tan Pengju2, Zhang Zhongfang2, Lv Hangbing1, 3, Liu Qi1, 3, Liu Ming1, 3
       

(a) and (b) Linear and log scale current–voltage characteristics of the Ti/Au/β-Ga2O3 MSM DUV photodetector in the dark, under black light irradiation, and under low-pressure mercury lamp irradiation.[9] (c) Steady-state I–V characteristic under light illumination and I–V characteristics in the dark (log scale), and (d) the time-dependent photoresponse under the illumination of 236 nm at 20 V (log scale) of the Ni/Au/β-Ga2O3 MSM photodetector before Al2O3 passivation. (e) I–V characteristic under light illumination and I–V characteristics in the dark (log scale), and (f) time-dependent photoresponse under the illumination of 236 nm at 20 V (log scale) of the Ni/Au/β-Ga2O3 MSM photodetector after Al2O3 passivation.[16]