Review of deep ultraviolet photodetector based on gallium oxide
Qin Yuan1, 3, Long Shibing2, 3, †, Dong Hang1, 3, He Qiming1, Jian Guangzhong1, 3, Zhang Ying1, 3, Hou Xiaohu2, Tan Pengju2, Zhang Zhongfang2, Lv Hangbing1, 3, Liu Qi1, 3, Liu Ming1, 3
       

(a) Schematic of the graphene/β-Ga2O3/graphene hybrid structure-based photodiode.[41] (b) I–V characteristics of the graphene/β-Ga2O3/graphene hybrid structure-based photodiode in the dark and under light illumination of 254 nm.[41] (c) Time-dependent photoresponse of the graphene/β-Ga2O3/graphene hybrid structure-based photodiode.[41] (d) I–V curves of the graphene-β-Ga2O3 heterojunction-based DUV photodiode in the dark and under 254 nm light illumination.[14] (e) Schematic figure of graphene/Ga2O3/p-GaN heterojunction-based photodiode.[43] (f) Time-dependent photoresponse characteristics of the graphene/Ga2O3/p-GaN heterojunction-based photodiode.[43] (g) Detectivity and responsivity as a function of bias voltage of the graphene/Ga2O3/p-GaN heterojunction-based photodiode.[43] (h) Schematic energy diagram of the α-Ga2O3/ZnO heterojunction at high reverse bias voltage under illumination of 254 nm.[12] (i) Photoconductive gain of the α-Ga2O3/ZnO heterojunction-based solar-blind photodetector as a function of bias voltage under 254 nm and 365 nm illumination.[12]