Review of deep ultraviolet photodetector based on gallium oxide

Qin Yuan^{1, 3}, Long Shibing^{2, 3, †}, Dong Hang^{1, 3}, He Qiming¹, Jian Guangzhong^{1, 3}, Zhang Ying^{1, 3}, Hou Xiaohu², Tan Pengju², Zhang Zhongfang², Lv Hangbing^{1, 3}, Liu Qi^{1, 3}, Liu Ming^{1, 3}

Device structure of (a) SiC/β-Ga₂O₃ and (d) GaN/β-Ga₂O₃ heterojunction-based photodiodes. The I–V characteristics of (b) SiC/Ga₂O₃ and (e) GaN/β-Ga₂O₃ heterojunction-based photodiodes under illumination with different light intensities. Photoresponse spectrum of photodiodes based on (c) β-Ga₂O₃/SiC and (f) GaN/β-Ga₂O₃ heterojunctions.^[39,40] (g) Schematic diagram of the SiC/β-Ga₂O₃ UV photodetector with different top electrodes. (h) Responsivity as a function of bias voltage of the SiC/Ga₂O₃ UV photodetector with graphene and Au top electrodes, respectively. (i) Time-dependent photoresponse characteristics of the SiC/Ga₂O₃ UV photodetector with graphene as the top electrode.^[15]