Review of deep ultraviolet photodetector based on gallium oxide
Qin Yuan1, 3, Long Shibing2, 3, †, Dong Hang1, 3, He Qiming1, Jian Guangzhong1, 3, Zhang Ying1, 3, Hou Xiaohu2, Tan Pengju2, Zhang Zhongfang2, Lv Hangbing1, 3, Liu Qi1, 3, Liu Ming1, 3
       

(a) The I–V characteristics of the solar-blind Cu/Ga2O3 Schottky photodetector in the dark. (b) Photoresponse spectrum of the photodetector at zero bias.[34] (c) The I–V characteristics of the β-Ga2O3/Ga:ZnO heterojunction based photodetector in the dark. The inset shows the schematic figure of the β-Ga2O3/Ga:ZnO photodetector. (d) Time-dependent photoresponse characteristics under illumination of 254 nm at 0 V and its corresponding fitting results.[37]