A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Zhang Z K, Pan W W, Liu J L, Lei W
       

(a) XRD FWHM of HgCdSe epilayers grown under various growth temperatures ranging from 70 °C to 120 °C; (b) representative SEM images of the HgCdSe surface after the 30 s EPD etch.[11] Inset of (a) shows the representative XRD rocking curve for HgCdSe grown under a growth temperature of 70 °C.