A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Three-dimensional AFM images and lateral height profiles of HgCdSe epilayers grown under growth temperatures ranging from 70 °C to 120 °C.[
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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Three-dimensional AFM images and lateral height profiles of HgCdSe epilayers grown under growth temperatures ranging from 70 °C to 120 °C.[ |
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