A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Microscope images of the surface of HgCdSe epilayers grown under a growth temperature of (a) 70 °C, (b) 80 °C, (c) 90 °C, (d) 100 °C, (e) 110 °C, and (f) 120 °C.[
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
|
Microscope images of the surface of HgCdSe epilayers grown under a growth temperature of (a) 70 °C, (b) 80 °C, (c) 90 °C, (d) 100 °C, (e) 110 °C, and (f) 120 °C.[ |
| |