A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
RSM data for ZnTe buffer layers grown on GaSb substrates with a thickness of (a) 150 nm, (b) 300 nm, (c) 400 nm, (d) 600 nm, and (e) 1000 nm.
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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RSM data for ZnTe buffer layers grown on GaSb substrates with a thickness of (a) 150 nm, (b) 300 nm, (c) 400 nm, (d) 600 nm, and (e) 1000 nm. |
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