A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
(a) The 80 K photoconductive decay measurement and (b) temperature dependent minority carrier lifetime of HgCdSe (x=0.18) grown at 70 °C on GaSb substrate.[
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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(a) The 80 K photoconductive decay measurement and (b) temperature dependent minority carrier lifetime of HgCdSe (x=0.18) grown at 70 °C on GaSb substrate.[ |
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