A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Temperature dependent (a) electron mobility and (b) electron concentration of as-grown HgCdSe (x=0.18) grown at 70 °C on GaSb substrate.[
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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Temperature dependent (a) electron mobility and (b) electron concentration of as-grown HgCdSe (x=0.18) grown at 70 °C on GaSb substrate.[ |
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