A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Electron mobility spectrum at 132 K of (a) GaSb substrate only and (b) HgCdSe (x=0.18) epilayer grown at 70 °C on GaSb substrate.[
A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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Electron mobility spectrum at 132 K of (a) GaSb substrate only and (b) HgCdSe (x=0.18) epilayer grown at 70 °C on GaSb substrate.[ |
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