High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
(a) DC and pulsed output characteristics and (b) frequency performance of the InAlGaN/GaN MOS-HEMTs.
High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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(a) DC and pulsed output characteristics and (b) frequency performance of the InAlGaN/GaN MOS-HEMTs. |
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