High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao
1, †
, Wang Zhi-Zhe
2
, Guo Rui
1
, Liu Ge
1
, Bao Wei-Min
3
, Zhang Jin-Cheng
1
, Hao Yue
1
The
V
TH
versus
I
D,max
of some state-of-the-art InAlGaN based E-mode devices.