High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao1, †, Wang Zhi-Zhe2, Guo Rui1, Liu Ge1, Bao Wei-Min3, Zhang Jin-Cheng1, Hao Yue1
       

(a) DC output and (b) transfer characteristics of the InAlGaN/GaN MOS-HEMTs.