High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao1, †, Wang Zhi-Zhe2, Guo Rui1, Liu Ge1, Bao Wei-Min3, Zhang Jin-Cheng1, Hao Yue1
       

Calculated 2DEG density of the InxAlyGa(1−x−y)N/GaN heterostructures with different alloy composition in the barrier layer.