High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao
1, †
, Wang Zhi-Zhe
2
, Guo Rui
1
, Liu Ge
1
, Bao Wei-Min
3
, Zhang Jin-Cheng
1
, Hao Yue
1
(a) SEM and (b) AFM surface image of the InAlGaN/GaN heterostructures grown by pulsed MOCVD.