High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Zhang Ya-Chao1, †, Wang Zhi-Zhe2, Guo Rui1, Liu Ge1, Bao Wei-Min3, Zhang Jin-Cheng1, Hao Yue1
       

HRXRD (0 0 0 6) 2θ–ω scan of the InAlGaN/GaN heterostructures grown by pulsed MOCVD.