Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS<sub>3</sub>

Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS₃

Yu Yi^{1, †}, Wang Chunchang¹, Li Liang², Li Qiuju¹, Cheng Chao², Wang Shuting¹, Zhang Changjin³

Temperature dependence of the resistivity and Seebeck coefficient from 300 K to 770 K for (a) the as-grown and (b) the annealed LaOBiHgS₃ samples. Error bars are amplified by 100 times. (c) Temperature dependence of the thermoelectric power for the as-grown and the annealed LaOBiHgS₃ samples.