Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS<sub>3</sub>

Synthesis, physical properties, and annealing investigation of new layered Bi-chalcogenide LaOBiHgS₃

Yu Yi^{1, †}, Wang Chunchang¹, Li Liang², Li Qiuju¹, Cheng Chao², Wang Shuting¹, Zhang Changjin³

Temperature dependence of resistivity of the as-grown LaOBiHgS₃ sample from 2 K to 300 K. The inset displays the temperature dependence of resistivity of the annealed LaOBiHgS₃ sample. Error bars are amplified 1000 times.