Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Wang Xia^{1, 2}, Wu Zhen-Ping^{1, 2}, Cui Wei^{1, 2}, Zhi Yu-Song^{1, 2}, Li Zhi-Peng³, Li Pei-Gang^{1, 2}, Guo Dao-You⁴, Tang Wei-Hua^{1, 2, †}

I–V characteristics curves: (a) at different light intensity; (b) under the states of the rigid, bend upward, and bend downward. The insets show the photographs of the flexible Ga₂O₃ thin film at the rigid, bend upward, and bend downward. Time-dependent photoresponse: (c) experimental curve and fitted curve of the current rise and decay process to 254 nm illuminations under the state of rigid. (d) The I–t curve under 254 nm light illumination.