Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Wang Xia^{1, 2}, Wu Zhen-Ping^{1, 2}, Cui Wei^{1, 2}, Zhi Yu-Song^{1, 2}, Li Zhi-Peng³, Li Pei-Gang^{1, 2}, Guo Dao-You⁴, Tang Wei-Hua^{1, 2, †}

(a) The HRTEM image of Ga₂O₃ thin film; inset: the corresponding SAED pattern. (b) The top surface view SEM image. (c) The UV absorbance spectrum of Ga₂O₃ thin film. (d) XPS spectra of Ga 2p core levels.