Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers

Synthesis of free-standing Ga₂O₃ films for flexible devices by water etching of Sr₃Al₂O₆ sacrificial layers

Wang Xia^{1, 2}, Wu Zhen-Ping^{1, 2}, Cui Wei^{1, 2}, Zhi Yu-Song^{1, 2}, Li Zhi-Peng³, Li Pei-Gang^{1, 2}, Guo Dao-You⁴, Tang Wei-Hua^{1, 2, †}

(a) Schematics of the free-standing Ga2O thin film fabrication process. (b) Photograph of the free-standing thin film on the surface of the water. (c) An optical microscope image of the edge of free-standing Ga2O3 thin film. (d) An image of the device fabricated by transferring free-standing Ga2O3 film onto the PET substrates.