Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang Dong¹, Wu Chenfei¹, Xu Weizong^{1, †}, Ren Fangfang¹, Zhou Dong¹, Yu Peng², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, ‡}

(a) Transfer curves of α-IGZO TFTs obtained in continuously repeated measurements with V_D=30 V and V_quies = −15 V. (b)Derived threshold voltage shift versus sweep times, the inset illustrates the electric field assisted charge detrapping process with negative quiescent gate bias.