Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang Dong¹, Wu Chenfei¹, Xu Weizong^{1, †}, Ren Fangfang¹, Zhou Dong¹, Yu Peng², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, ‡}

Transfer curves of α-IGZO TFTs with various V_quies at V_D=30 V and t_quies = 200 ms. The red dash line stands for transfer characteristics measured at t_quies = 2000 ms, where V_th shift could be taken as zero owing to enough heat dissipation time. The inset shows the pulsed negative gate bias stressing scheme.