Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang Dong¹, Wu Chenfei¹, Xu Weizong^{1, †}, Ren Fangfang¹, Zhou Dong¹, Yu Peng², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, ‡}

Transfer curves of α-IGZO TFTs with various t_quies at (a) V_D = 10 V and (b) V_D = 30 V, while V_quies = 0 V, W / L = 200 μ m / 5 μ m . (c) Derived threshold voltage shift versus t_quies with drain biases of 30 V (blue), 20 V (green), and 10 V (orange).