Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang Dong¹, Wu Chenfei¹, Xu Weizong^{1, †}, Ren Fangfang¹, Zhou Dong¹, Yu Peng², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, ‡}

(a) Transfer curves of α-IGZO TFTs with various quiescent state time t_quies at V_D = 20 V, V_quies = 0 V, and W / L = 200 μ m / 5 μ m . (b) Derived threshold voltage shift versus t_quies with different channel widths of 25 μ m (green) and 200 μ m (orange).