Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang Dong¹, Wu Chenfei¹, Xu Weizong^{1, †}, Ren Fangfang¹, Zhou Dong¹, Yu Peng², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, ‡}

(a) Structure of α-IGZO TFT fabricated on n⁺ Si substrate; (b) waveform of the pulsed gate bias applied in the pulsed I_D–V_G measurement.