Pressure-mediated contact quality improvement between monolayer MoS<sub>2</sub> and graphite<xref rid="cpb_28_1_017301fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017301fn1"><label>*</label><p>Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).</p></fn>

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite**

Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

Liao Mengzhou^{1, 2}, Du Luojun^{1, 2, 6}, Zhang Tingting^{1, 2, 3}, Gu Lin^{1, 2}, Yao Yugui³, Yang Rong^{1, 2, 4}, Shi Dongxia^{1, 2, 4, †}, Zhang Guangyu^{1, 2, 4, 5, ‡}

Explanation of pressure-enhanced contact quality between MoS₂ and graphite under pressure. (a) I–V curves of metal tip/transferred MoS₂/ITO junction under different pressure. (b) Schottky barrier height of metal tip/transferred MoS₂/ITO junction as function of pressure. (c) Schematic illustration of metal tip–MoS₂–graphite contact. The band structure at negative sample bias of (d) upstretched MoS₂ and (e) stretched ∼2.7% MoS₂.