Pressure-mediated contact quality improvement between monolayer MoS<sub>2</sub> and graphite<xref rid="cpb_28_1_017301fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017301fn1"><label>*</label><p>Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).</p></fn>

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite**

Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

Liao Mengzhou^{1, 2}, Du Luojun^{1, 2, 6}, Zhang Tingting^{1, 2, 3}, Gu Lin^{1, 2}, Yao Yugui³, Yang Rong^{1, 2, 4}, Shi Dongxia^{1, 2, 4, †}, Zhang Guangyu^{1, 2, 4, 5, ‡}

The electrical behavior of MoS₂/graphite heterojunction under pressure. (a) Schematic of the measuring process and the circuit. (b) Tip–sample current as a function of tip load under bias of 1.5 V. The insert is the resistance of the MoS₂/graphite junction as a function of pressure. (c) I–V curves under different pressure.