Pressure-mediated contact quality improvement between monolayer MoS<sub>2</sub> and graphite<xref rid="cpb_28_1_017301fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017301fn1"><label>*</label><p>Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).</p></fn>

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite**

Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

Liao Mengzhou^{1, 2}, Du Luojun^{1, 2, 6}, Zhang Tingting^{1, 2, 3}, Gu Lin^{1, 2}, Yao Yugui³, Yang Rong^{1, 2, 4}, Shi Dongxia^{1, 2, 4, †}, Zhang Guangyu^{1, 2, 4, 5, ‡}

Characterizations of MoS₂/graphite heterojunctions. (a) Optical image of as-grown MoS₂ triangle domains on graphite. (b) AFM image of a MoS₂ domain. (c) SAED pattern, (d) Raman spectrum, and (e) photoluminescence spectrum of the MoS₂/graphite heterojunction.