Generation of valley pump currents in silicene<xref rid="cpb_28_1_017204fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017204fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11274059, 11574045, and 11704165).</p></fn>

Generation of valley pump currents in silicene**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11274059, 11574045, and 11704165).

Jada Marcellino John Tombe¹, Wang Mei-Juan¹, Wang Sa-Ke^{1, 2, †}

Schematic of the proposed silicene-based two-terminal pump device. The silicene sheet is in the xy plane; the two pumping sources, with L in length, are the strain A = A₀ cos ωt and staggered potential Δ = Δ₀ cos(ωt + ϕ) with a phase lag ϕ and a distance L₀ between them. The device is connected to electrodes by the left (L) and right (R) leads, the pumped current is assumed along the x axis.