Current diffusion and efficiency droop in vertical light emitting diodes<xref rid="cpb_28_1_017203fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017203fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB0406702), the Professorship Start-up Funding (Grant No. 217056), the Innovation-Driven Project of Central South University, China (Grant No. 2018CX001), the Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China (Grant No. ZZYJKT2018-01), and Guangzhou Science & Technology Project of Guangdong Province, China (Grant Nos. 201704030106 and 2016201604030035).</p></fn>

Current diffusion and efficiency droop in vertical light emitting diodes**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB0406702), the Professorship Start-up Funding (Grant No. 217056), the Innovation-Driven Project of Central South University, China (Grant No. 2018CX001), the Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China (Grant No. ZZYJKT2018-01), and Guangzhou Science & Technology Project of Guangdong Province, China (Grant Nos. 201704030106 and 2016201604030035).

Wan R Q¹, Li T¹, Liu Z Q^{2, 3}, Yi X Y^{2, 3}, Wang J X^{2, 3}, Li J H¹, Zhu W H¹, Li J M², Wang L C^{1, †}

(a) Lateral carrier's distribution n(x)−I; (b) the corresponding IQE(x) curves under various L_s (24.5, 100, and 200 μm) and J (10, 100 A/cm²); (c) the average EQE-I(J); (d) the average IQE-I(J); (e) the average LEE-I(J) curves; (f) n₀ − I; and (g) n_l −I(J) curves for case I.