Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments<xref rid="cpb_28_1_017201fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017201fn1"><label>*</label><p>Project supported by the National Key Basic Research Project of China (Grant No. 2016YFA0300600), Chinese Academy of Sciences (Grant No. KJCX2-YW-W24), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11604375), and the Laboratory of Microfabrication of Institute of Physics, Chinese Academy of Sciences.</p></fn>

Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments**

Project supported by the National Key Basic Research Project of China (Grant No. 2016YFA0300600), Chinese Academy of Sciences (Grant No. KJCX2-YW-W24), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11604375), and the Laboratory of Microfabrication of Institute of Physics, Chinese Academy of Sciences.

Zhu Kejian^{1, 2}, Lin Weijian^{1, 2}, Su Yangtao^{1, 2}, Shi Haibin^{1, 2}, Meng Yang^{1, 2}, Zhao Hongwu^{1, 2, 3, †}

(a) Schematic diagram of the ITO(100 nm)/YIG sample and electrical measurement geometry. The stripe and the Hall bar were used for spin pumping and LSSE measurements, respectively. (b) ISHE voltage as a function of H along y axis for the as-prepared ITO/YIG, annealed ITO/YIG, and Pt/YIG. (c) FMR linewidths of YIG, Pt/YIG, as-prepared ITO/YIG, and annealed ITO/YIG structure as a function of the microwave frequency.